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Nexperia Launches New 600V Single Tube IGBT
2023-07-07

Nexperia, a high-capacity production expert in the field of basic semiconductor devices, announced today that it will enter the Insulated-gate bipolar transistor (IGBT) market with the 600 V device series, and the 30A NGW30T60M3DF will be the first to enter the market. Nexperia has added IGBT to its vast product portfolio, meeting the growing market demand for efficient high-voltage switching devices, as well as performance and cost requirements. These devices help improve power density in power conversion and motor drive applications, including industrial motor drives (such as servo motors of 5 to 20 kW (20 kHz)), robots, elevators, machine operators, industrial automation, power inverters, uninterruptible power supplies (UPS), photovoltaic (PV) series components, EV charging, and induction heating and welding.


IGBT is a relatively mature technology. Nevertheless, the market for these devices is expected to grow with the increasing popularity of solar panels and electric vehicle (EV) chargers. Nexperia's 600 V IGBT adopts a robust, cost-effective carrier storage trench gate field cutoff (FS) structure, providing ultra-low conduction and switching loss performance and high durability at operating temperatures up to 175 ℃. This can improve the efficiency and reliability of power inverters, induction heaters, welding equipment, and industrial applications such as motor drives and servos, robots, elevators, machine operators, and industrial automation.

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Designers can freely choose between medium speed (M3) and high-speed (H3) series IGBTs. These IGBTs adopt a very tight parameter distribution design, allowing multiple devices to be safely connected in parallel. In addition, compared to competing devices, its thermal resistance is lower, so it can provide higher output power. These IGBTs are also connected in parallel with full current reverse soft fast recovery diodes. This means that they are suitable for applications in inverters, rectifiers, and bidirectional conversion circuits, making them more robust under overcurrent conditions.


Dr. Jiang Ke, General Manager of Nexperia Insulated-gate bipolar transistor and Module Business Department, said: "Nexperia has provided designers with more choices of power switching devices by releasing IGBT to meet the needs of a wide range of power applications. IGBT is an ideal complement to Nexperia's existing CMOS and broadband gap switching device series products, which can provide one-stop service for power electronics designers."


These IGBTs are packaged in lead-free TO247-3L standard packaging and meet strict HV-H3TRB quality standards, making them suitable for outdoor applications. Nexperia plans to launch the 1200 V IGBT series of devices after this product release.


About Nexperia


Nexperia, headquartered in the Netherlands, is a global semiconductor company with a rich and long history of development in Europe. Currently, it has more than 15000 employees in Europe, Asia, and the United States. As a leader in the development and production of basic semiconductor devices, Nexperia's devices are widely used in various application fields such as automotive, industrial, mobile, and consumer, providing support for almost all the basic functions of electronic design in the world.


Nexperia provides services to customers worldwide, with annual product shipments exceeding 100 billion units. These products have become industry benchmarks in terms of efficiency (such as process, size, power, and performance) and are widely recognized. Nexperia has a rich IP product portfolio and continuously expanding product range, and has been certified to IATF 16949, ISO 9001, ISO 14001, and ISO 45001 standards, fully demonstrating the company's firm commitment to innovation, efficiency, sustainable development, and meeting the strict requirements of the industry.

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