Grid chip received $35 million in funding subsidy to accelerate mass production of silicon based gallium nitride wafers_News_ALL NEW SEMI (ANSC)

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Grid chip received $35 million in funding subsidy to accelerate mass production of silicon based gallium nitride wafers

2023-10-23

Recently, Gexin announced that it has received $35 million from the US Department of Defense to support its silicon based gallium nitride (GaN on Si) platform at its Vermont factory, which is expected to accelerate the company's mass production of 200mm silicon based gallium nitride wafers.

The Vermont semiconductor manufacturing plant in Greenchip has stated that it is continuing to move towards mass production of next-generation gallium nitride chips for aerospace and defense, cellular communication, industrial IoT, and automotive applications.

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Thomas Caulfield, President and CEO of Gexin, said, "Silicon based gallium nitride is an ideal technology for high-performance RF, high-voltage power switching and control applications in emerging markets, and is crucial for 6G wireless communication, industrial Internet of Things, and electric vehicles

Gexin plans to purchase more equipment to enhance its development and prototype design capabilities, moving towards large-scale 200mm silicon based gallium nitride semiconductor manufacturing. As part of the investment, Grid plans to implement new capabilities to reduce the risk of gallium supply chain constraints faced by Grid and its customers, while improving the development speed, supply assurance, and competitiveness of gallium nitride chips manufactured in the United States.

According to relevant information, the Vermont factory with 1800 employees is a DMEA (Defense Microelectronics) certified trusted foundry that collaborates with the US Department of Defense to produce safety chips for use in some of the most sensitive aerospace and defense systems in the United States.

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