Recently, STMicroelectronics has decided to further expand its production facilities by establishing a brand new silicon carbide (SiC) semiconductor wafer fab in Catane, Sicily, Italy. The total investment amount is up to 5 billion euros, and the wafer factory will specialize in producing silicon carbide chips, which are key technologies for electric vehicles and have strong growth potential.

According to the report, this move is a move by Italian and French semiconductors to balance the group's ownership of China and France, following the € 7.5 billion wafer fab plan with Gexin in Crolles, southeastern France.

In June of this year, STMicroelectronics announced the establishment of a 200mm silicon carbide device manufacturing joint venture with Sanan Optoelectronics in Chongqing, China. It is expected to be put into operation in the fourth quarter of 2025 and its silicon carbide revenue is expected to exceed 5 billion US dollars by 2030.

Silicon carbide is a wide bandgap semiconductor material that can operate under higher voltage, frequency, and temperature conditions compared to traditional silicon-based semiconductors, significantly reducing power loss and improving overall system efficiency. These characteristics make silicon carbide an important driving force for innovation in the field of electric vehicles, especially in core components such as inverters, car chargers, and motor controllers.

As a leader in the SiC power MOSFET market, STMicroelectronics has been committed to integrating advanced design technologies and processes to fully tap into the energy-saving potential of silicon carbide and accelerate the transformation of the electric vehicle and industrial markets. With the accelerated development of the electric vehicle market, many vehicle manufacturers and supporting suppliers have begun to adopt silicon carbide technology to improve product performance and endurance.

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