Recently, Micron Technology announced that it has begun to send samples of its first 8-high 24GB HBM3 Gen2 memory product, with bandwidth greater than 1.2TB/s and pin speed greater than 9.2Gb/s, which is 50% higher than the current HBM3 solution, and its performance per watt is 2.5 times higher than previous generations of products.

It is reported that Micron Technology HBM solution adopts 1 β (1-beta) DRAM process node, which allows the assembly of 24Gb DRAM chips into 8-high cubes within industry standard packaging sizes. In addition, Meguiar's 36GB capacity product with 12 layers of stacking will also begin sampling in the first quarter of 2024. Compared with existing competitive solutions, Micron Technology provides 50% more capacity at a given stack height. The improvement in performance to power ratio and pin speed of Meguiar's second-generation HBM3 products is crucial for managing the extreme power demands of today's AI data centers. Meguiar has achieved significant improvement in energy efficiency through technological innovation. For example, compared with other HBM3 solutions in the industry, Meguiar doubled the number of silicon through holes (TSVs), increased metal density by five times to reduce thermal resistance, and designed more energy-efficient Datapath.

Micron Technology said that as part of the development of HBM3 Gen2 products, the cooperation between Micron Technology and TSMC laid the foundation for the smooth introduction and integration of computing systems designed and applied by AI and HPC. TSMC has received samples of Micron Technology's HBM3 Gen2 memory, and is working closely with Micron Technology for further evaluation and testing to help customers innovate in next-generation High-performance computing applications.

Praveen Vaidyanathan, Vice President of Micron and General Manager of the Computing Products Business Group of the Computing and Network Business Unit, said, "Micron's second generation HBM3 solution is designed to provide customers and the industry with excellent AI and High-performance computing solutions. One of our important criteria is whether the product is easy to integrate on the customer's platform. Micron's HBM3 has a fully programmable memory Built-in self-test (MBIST) The function can run at full specification pin speeds, enabling Meiguang to provide customers with stronger testing capabilities, achieve efficient collaboration, and help customers shorten product launch time

Previously, Micron Technology launched a α The 96GB DDR5 module with a (1-alpha) 24Gb single chip DRAM chip is designed for server solutions with high capacity requirements. This launch is based on 1 β 24GB HBM3 product with 24Gb chips. Micron Technology plans to launch in the first half of 2024 based on 1 β 128GB DDR5 module with 32Gb single chip DRAM chip.