Mitsubishi Electric collaborates with Anse to develop SiC power semiconductors_News_ALL NEW SEMI (ANSC)

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Mitsubishi Electric collaborates with Anse to develop SiC power semiconductors

2023-11-28

Recently, Mitsubishi Electric and Nexperia announced their joint development of efficient silicon carbide (SiC) MOSFET discrete power semiconductors. Mitsubishi Electric will develop and supply SiC MOSFET chips to Nexperia, while Nexperia will develop SiC discrete components equipped with Mitsubishi Electric's chips.

Mark Roelofzen, Senior Vice President and General Manager of Ansei Semiconductor's Bipolar Discrete Devices Business Unit, stated: "Establishing a win-win strategic partnership with Mitsubishi Electric marks significant progress for Nexperia in the field of silicon carbide technology. The high-quality standards and expertise of Nexperia's discrete products and packaging technology complement each other, and will inevitably generate positive synergies between the two companies, ultimately helping customers provide high-energy efficiency products in the industrial, automotive, and consumer markets they serve."

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Dr. Masayoshi Takemi, Executive Officer and Group President of Mitsubishi Electric's Semiconductor and Devices Division, said, "Nexperia is a leading enterprise in the industry with mature technology in the field of high-quality discrete semiconductors. We are pleased to have reached a joint development cooperation agreement with them to fully utilize the semiconductor technology of both companies."

Public information shows that Ansei Semiconductor is headquartered in the Netherlands and is currently a subsidiary of China Wentai Technology. In early November, Ansei Semiconductor was forced to resell the UK NWF wafer factory it acquired in 2021.

Mitsubishi Electric pointed out that the popularity of EVs is expected to drive the rapid expansion of demand for SiC power semiconductors.

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