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Samsung Electronics to Expand Silicon Valley R&D Institutions to Specially Design AI Chips
2024-04-20

Samsung Electronics plans to expand its research and development (R&D) facility in Silicon Valley, focusing on artificial intelligence (AI) chip design. In the process of reshaping the semiconductor industry with a focus on artificial intelligence chips, Samsung aims to strengthen its design capabilities to break the current market landscape dominated by large technology companies such as Nvidia in the United States.


According to industry insiders, Samsung's SAIT (formerly known as Advanced Technology Institute) has established an Advanced Processor Laboratory (APL) in Silicon Valley, specializing in AI chip design.


According to reports, APL is developing the next generation of semiconductor design, with a focus on the RISC-V field. RISC-V is the fundamental standard for semiconductor chip design, and this field is mainly monopolized by the UK semiconductor design company ARM. Samsung's RISC-V initiative is interpreted as a step towards technological independence.


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The ultimate goal of Samsung APL Research Institute is to design its own RISC-V based AI chip. In history, Samsung has designed cutting-edge semiconductor chips such as Exynos based on ARM products. However, the company is expected to break Nvidia's dominant position and prepare to achieve market leadership through independent design technology for artificial intelligence chips.


In order to integrate RISC-V technology into its semiconductor design, Samsung has been managing an internal working group, which has now been officially established and research work has been initiated under a new name. Samsung not only strengthens its research on next-generation semiconductors through APL, but also throughout Silicon Valley. Samsung has established a General Artificial Intelligence (AGI) computing laboratory in the United States and is advancing the development of Mach-1 AI inference chips. In addition, Samsung has established a new research organization to develop 3D DRAM, which may completely change the existing DRAM paradigm.


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