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STMicroelectronics Announces Mass Production of PowerGaN Devices

STMicroelectronics announced that it has started mass production of enhanced mode PowerGaN HEMT (High-electron-mobility transistor) devices that can simplify the design of efficient power conversion systems. STPOWER ™ GaN transistors have improved the performance of wall power adapters, chargers, lighting systems, industrial power supplies, renewable energy generation, automotive electrification, and other applications.


The two early products launched in this series, SGT120R65AL and SGT65R65AL, are both industrial grade 650V normally closed G-HEMT ™ The transistor is packaged in a PowerFLAT 5x6 HV mount with rated currents of 15A and 25A, respectively. The typical on resistance (RDS (on)) at 25 ° C is 75m Ω and 49m Ω, respectively. In addition, the total gate charge and low parasitic capacitance of 3nC and 5.4nC ensure that the transistor has the minimum on/off energy loss. The Kelvin source pin optimizes the gate drive. In addition to reducing the size and weight of the power supply and adapter, the two new GaN transistors can also achieve higher energy efficiency, lower operating temperature, and longer service life.

In the next few months, STMicroelectronics will launch new PowerGaN products, namely car gauge devices, and more power packaging forms, including PowerFLAT 8x8 DSC and LFPAK 12x12 high-power packaging.

STMicroelectronics's G-HEMT device will accelerate the transition of power conversion system to GaN wide band gap technology. The breakdown voltage and conduction resistance RDS (on) of GaN transistors are the same as those of silicon-based transistors, while the total gate charge and parasitic capacitance are lower and there is no reverse recovery charge. These characteristics improve the energy efficiency and switching performance of transistors, enabling the use of smaller passive devices to achieve higher switching frequencies and increase power density. Therefore, application devices can become smaller and have higher performance. In the future, GaN is expected to achieve new power conversion topologies, further improving energy efficiency and reducing power consumption.

STMicroelectronics PowerGaN discrete devices have sufficient capacity to support customers' rapid mass production needs. SGT120R65AL and SGT65R65AL are now available in PowerFLAT 5x6 HV packaging.

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